 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Infrared Light Emitting Diodes LNA4401L GaAlAs Infrared Light Emitting Diode o4.60.15 Unit : mm Glass lens For optical control systems Features High-power output, high-efficiency : PO = 10 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) TO-18 standard type package 12.7 min. 6.30.3 2-o0.450.05 2.540.25 0 0 1. .2 .1 5 3 45 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 1. 21 Symbol PD IF IFP * Ratings 190 100 1 3 -25 to +85 -30 to +100 Unit mW mA A V C C 0 0 o5.75 max. 1: Anode 2: Cathode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Cutoff frequency * Symbol PO P VF IR Ct fC* Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 6 typ 10 860 40 1.6 max Unit mW nm nm 1.9 10 V A pF deg. MHz 6 20 IFP = 50mA + 10mAp-p Frequency when modulation optical power decreases by 3dB from 1MHz. ( PO(fCMHz) 10 log =-3 P O (1MHz) ) 1 Infrared Light Emitting Diodes LNA4401L IF -- Ta 120 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 10 4 IFP -- VF tw = 10s f = 100Hz Ta = 25C IF (mA) Pulse forward current IFP (mA) 1 10 10 2 IFP (A) 100 10 3 10 Allowable forward current 80 Pulse forward current 10 2 60 1 10 40 10 -1 20 1 0 - 25 0 20 40 60 80 100 10 -2 10 -1 10 -1 0 1 2 3 4 5 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) PO -- IFP 10 2 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 2.2 VF -- Ta 10 PO -- Ta IF = 50mA PO VF (V) 10 1.8 IF = 100mA 50mA Relative radiant power Forward current (2) 1 1.4 Relative radiant power 120 PO 1 0 40 80 10 -1 - 40 (1) 10 -1 1.0 10 -2 1 10 10 2 10 3 0.6 - 40 0 40 80 Pulse forward current IFP (mA) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 920 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25C Directivity characteristics 0 100 10 20 P (nm) Relative radiant intensity (%) 900 80 80 70 Relative radiant intensity (%) 90 30 Peak emission wavelength 880 60 60 50 40 40 50 60 70 80 90 860 40 30 20 840 20 820 - 40 0 40 80 120 0 750 800 850 900 950 1000 1050 Ambient temperature Ta (C ) Wavelength (nm) 2 |
Price & Availability of LNA4401L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |